1996. 10. 11 1/3 semiconductor technical data KTA1281 epitaxial planar pnp transistor revision no : 0 power amplifier applications. power switching applications. features low collector saturation voltage : v ce(sat) =-0.5v(max.) (i c =-1a) high speed switching time : t stg =1.0 s(typ.) complementary to ktc3209. maximum rating (ta=25 1 ) dim millimeters a b d e g h k l 1. emitter 2. collector 3. base p to-92l 7.20 max 5.20 max 2.50 max 0.60 max 1.27 1.70 max 0.55 max 14.00 0.50 0.35 min 0.75 0.10 4 f j m o q 25 1.25 1.50 0.10 max depth:0.2 123 b a c q k ff m m n n o h l j d c n g p hh e d h r s 12.50 0.50 r 1.00 s 1.15 max + _ + _ + _ electrical characteristics (ta=25 1 ) note : h fe classification 0:70 140, y:120 240 characteristic symbol rating unit collector-base voltage v cbo -50 v collector-emitter voltage v ceo -50 v emitter-base voltage v ebo -5 v collector current i c -2 a collector power dissipation p c 1 w junction temperature t j 150 1 storage temperature range t stg -55 150 1 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-50v, i e =0 - - -0.1 a emitter cut-off current i ebo v eb =-5v, i c =0 - - -0.1 a collector-emitter breakdown voltage v (br)ceo i c =-10ma, i b =0 -50 - - v dc current gain h fe (1)(note) v ce =-2v, i c =-0.5a 70 - 240 h fe (2) v ce =-2v, i c =-1.5a 40 - - collector-emitter saturation voltage v ce(sat) i c =-1a, i b =-0.05a - - -0.5 v base-emitter saturation voltage v be(sat) i c =-1a, i b =-0.05a - - -1.2 v transition frequency f t v ce =-2v, i c =-0.5a - 100 - mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz - 40 - pf switching time turn-on time t on - 0.1 - s storage time t stg - 1.0 - fall time t f - 0.1 - -i =i =0.05a 1% b1 b2 duty cycle < = i b1 i b1 30? cc v =-30v i b2 i b2 20 s output input
1996. 10. 11 2/3 KTA1281 revision no : 0 ce v (v) collector-emitter voltage collector current i (a) c c ce v - i collector current i (a) c -30 static characteristics collector current i (a) h - i dc current gain h fe 10 1k -0.01 -0.03 -0.1 c -20 -10 0 -2 -4 -6 -8 -0.4 -0.8 -1.2 -0.8 -1.2 -1.6 -2.0 -0.4 i =-2ma b -25 -20 -18 -15 -12 -10 -8 -6 -4 0 v =-2v c e base current i (ma) b 0 collector emitter voltage v (v) ce base-emitter voltage v (v) ce common emitter ta=25 c collector current i (a) collector-emitter voltage v (v) -0.2 0 ce 0 v - i ce c c c collector current i (a) v (v) collector-emitter voltage v - i ce c -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 -0.4 -0.6 -0.8 -1.0 -1.2 i =-5ma b -1 0 -20 -40 -80 -120 -16 0 -200 common emitter ta=25 c -20 0 common emitter -160 -120 -2.0 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 i =-5ma 0 0 -0.4 b -1.2 -0.8 -20 - 30 -1.6 ta=100 c -40 - 8 0 -2.8 -2.4 -60 -180 i = -5m a -0.6 -0.2 -0.4 ce 0 0 -0.4 -0.8 -1.0 -1.2 -20 0 -120 -16 0 ta=-55 c -2.0 common emitter -1.2 -0.8 -1.6 b - 20 -30 -6 0 -4 0 -8 0 -2.8 -2.4 fe c -0.3 -1 -3 30 50 100 300 500 common emitter v =-2v ce ta=100 c ta=25 c ta=-55 c
1996. 10. 11 3/3 KTA1281 revision no : 0 c -1.5 0 -1.0 collector current i (a) -0.5 base-tmitter saturation be(sat) collector current i (a) c 0 base-emitter voltage v (v) be be c i - v v - i v - i c collector current i (a) -0.01 -0.03 -0.1 -0.3 -0.01 ce(sat) collector-emitter saturation ce(sat) c voltage v (v) -1 -3 -0.03 -0.05 -0.1 -0.3 -0.5 -1 common emitter i /i =20 c b ta=100 c ta=25 c ta=-55 c ce collector-emitter voltage v (v) -0.5 collector current i (a) -0.2 -0.01 c -3 -1 safe operating area be(sat) c voltage v (v) common emitter i /i =20 -0.01 -0.01 -1 -0.1 -0.3 -0.5 -0.05 -0.03 c b -0.1 -0.03 -0.3 ta=25 c ta=100 c ta=-55 c -3 -1 collector power dissipation ambient temperature ta ( c) 200 c 0 0 p - ta c -0.4 -0.8 -1.2 -1.6 -2.0 -2.0 common emitter v =-2v ce ta=1 00 c ta=25 c ta=-55 c p (mw) 40 80 120 160 200 400 600 800 1000 -10 -30 -100 -0.03 -0.05 -0.1 -0.3 -0.5 -1 -3 -5 single nonrepetitive pulse ta=25 c curves must be derated linearly with increase in temperature * dc operati o n ta=2 5 c 1s 100ms 10ms 1m s * * * * v max. ceo i max.(pulsed) i max.(continuous) c c * 1200
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